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| 1,310nm Modulator Integrated DFB Laser FEATURES * Modulator Integrated DFB Laser Diode Module * CW operation of DFB laser section * Modulation voltage applied only to modulator section * High speed butterfly package with GPO connection * Built-in optical isolator, monitor photodiode, thermistor, and thermo-electric cooler FLD3F10NP-A APPLICATION This MI laser is intended for intermediate reach applications (24km) at 10Gb/s. DESCRIPTION The Modulator Integrated DFB Laser (MI DFB Laser) has an electro-absorption modulator monolithically integrated with a conventional Distributed Feed-Back (DFB) laser. The modulation voltage is applied to the modulator section while the laser section operates CW allowing extremely low wavelength chirping. Extinction ratios of more than 8.2 dB can be achieved with 2.6 Vp-p modulation. The MI laser is installed in a butterfly type package. The module incorporates a highly stable optical coupling system. The module includes an optical isolator, monitor photodiode, thermistor and a thermoelectric cooler. ABSOLUTE MAXIMUM RATINGS (Top=25C, unless otherwise specified) Rating Parameter Operating Case Temperature Storage Temperature Optical Output Power Laser Forward Current Laser Reverse Voltage Modulator Forward Voltage Photodiode Forward Current Photodiode Reverse Voltage TEC Voltage TEC Current Thermistor Temperature Lead Soldering Time Symbol Top Tstg Pf IF VR Vm VDR Vc Ic Tth Condition CW CW CW CW Cooling Heating Cooling Heating ATC Operation 260C Min. 0 -40 -5 -2.0 -0.7 0 Max. +70 +85 5 150 2 +1 1 10 +2.5 +1.4 +70 10 Unit C C mW mA V V mA V V A C sec Edition 1.3 July 2004 1 FLD3F10NP-A Parameter Peak Wavelength Threshold Current Threshold Power Operating Current Forward Voltage Optical Output Power (Avg. Power) Dispersion Penalty Sidemode Suppression Ratio Optical Isolation On Level Modulation Modulator Drive Voltage Extinction Ratio Rise Time Fall Time Cut-off Frequency RF Return Loss RF Return Loss Monitor Current TEC Capacity TEC Current TEC Voltage TEC Power Dissipation Thermal Resistance Thermistor B Constant Symbol p Ith Pth Iop VF Pf dP SSR Is Vo Vmod Rext Tr Tf S21 S11 S11 Im T Ic Vc Pc Rth B Test Condition Note (2) CW, Vm=Vo CW, IF=Ith, Vm=Vo CW, Vm=Vo CW, IF=Iop, Vm=Vo Note (1) Note (1) Note (2) Tc=0 to +70C (Vo-Vmod)-3.3V f=10Gb/s, IF=Iop, Vm=Vo/(Vo-Vmod) Note (2), 20 to 80% Note (2), 20 to 80% 1,310nm Modulator Integrated DFB Laser Limits Type 35 3,450 Unit nm mA W mA V dBm dB dB dB V Vpp dB ps ps GHz dB dB mA C A V W k K OPTICAL & ELECTRICAL CHARACTERISTICS (TL= Tset, Tc = 25C, BOL, unless otherwise specified) Min. 1290 50 0.0 30 23 -1.0 8.2 10 8 5 0.2 45 9.5 3,270 Max. 1320 35 75 100 2.2 2.0 1.0 0 2.6 25 25 2.0 1.2 2.4 2.9 10.5 3,630 -3dB bandwidth, Vm=-1V, IF=Iop f=DC-5GHz, 50 Test Set, Vm=-1V, IF=Iop f=5-10GHz, 50 Test Set, Vm=-1V, IF=Iop VDR=5V, Note (2) PTEC=2.4W, IF=Iop IF=Iop, T=45C IF=Iop, T=45C IF=Iop TL=25C Note (1) Eudyna Test System 23 9.95328Gb/s, PRBS=2 -1, IF=Iop, Vm=Vo and (Vo-Vmod) Dispersion=82ps/nm, Dispersion penalty at Bit Error Rate = 1.0E-10 Note (2) Eudyna Test System 23 9.95328Gb/s, PRBS=2 -1, IF=Iop, Vm=Vo and (Vo-Vmod) 2 1,310nm Modulator Integrated DFB Laser Fig. 1 Lasing Spectrum FLD3F10NP-A Fig. 2 Output Pwer & Monitor Current vs. Forward Current Output Power, Pf (mW) 4 3 2 Pf 1 0 0.5 0 100 Monitor Current (mA) Vo=-0.3V TLD=+25C Im 1.0 2.0 1.5 Relative Intensity (10 dB/div.) 10 Gb/s PRBS=223-1 IF=Iop Vm=Vo/(Vo-2) 0 20 40 60 80 Forward Current, IF (mA) Wavelength (Span=1 nm/div, Res.=0.1nm) Fig. 3 Extinction Ratio vs. Modulation Voltage 0 Minus Extinction Ratio (dB) -5 -10 -15 -20 -25 0 0.5 1.0 1.5 2.0 2.5 Modulation Voltage (V) Fig. 4 Cut-off Frequency (S21) Fig. 5 RF Return Loss (S11) Relative Output (dB) Return Loss (dB) 12 9 6 3 0 -3 -6 -9 -12 0 5 10 15 20 40 30 20 10 0 -10 -20 -30 -40 0 5 10 15 20 Frequency (GHz) Frequency (GHz) 3 FLD3F10NP-A "NP" PACKAGE 2.540.20 PIN 7 17.240.25 15.240.25 7-0.5 PIN 1 o5.20.25 8.890.15 12.70.25 1.25 1,310nm Modulator Integrated DFB Laser UNIT: mm 8.170.25 7-0.150.05 5.410.25 7 6 TOP VIEW 5 4 3 2 1 o0.90.1 8.250.20 4.830.20 TEC TH 10K 50 o4.16 10.00.25 20.830.25 22.000.25 26.040.25 29.970.25 4-o2.670.2 5.080.25 8 # 1 2 3 4 5 6 7 8 PIN DESIGNATIONS Thermistor Thermistor LD Anode Power Monitor Anode Power Monitor Cathode Thermoelectirc Cooler (+) Thermoelectric Cooler (-) Modulator Anode (-) *L 25.00.5 Case Ground: LD Cathode * Pigtail length (L) and connector type are specified in the detail (individual) specification. PIN 8 5.470.2 0.50.2 CONNECTOR For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4 |
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